Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential
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چکیده
As MOSFET devices are aggressively scaled into the deep submicron regime quantum mechanical effects become increasingly important. We compare the recently proposed effective potential formalism with the density gradient approach for first order quantum simulations of sub 0.1μm MOSFETs within a modified drift diffusion framework.
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تاریخ انتشار 2001